J. Eur. Opt. Society-Rapid Publ. 22, 39( 2026) 389
21 Liu H, et al., Design and fabrication of high performance InGaAs near infrared photodetector, Nanomaterials 13( 21), 2895( 2023). https:// doi. org / 10.3390 / nano13212895
22 Koronnov AA, et al., InGaAs / InP PIN photodiode for optical receivers in pulsed-laser range finding systems, Bull. Lebedev Phys. Inst. 52( Suppl 1), S106 – S112( 2025). https:// doi. org / 10.3103 / S1068335625600263.
23 Andreev DS, et al., Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs / InP structure, J. Commun. Technol. Electr. 61( 10), 1220 – 1225( 2016). https:// doi. org / 10.1134 / S1064226916100028.
24 Savich GR, et al., Dark current filtering in unipolar barrier infrared detectors, Appl. Phys. Lett. 99, 12( 2011). https:// doi. org / 10.1063 / 1.3643515.
25 Savich GR, et al., Use of unipolar barriers to block dark currents in infrared detectors, in Infrared Technology and Applications XXXVII, Vol. 8012( SPIE, 2011). https:// doi. org / 10.1117 / 12.884075.
26 Gravrand O, Boulard F, Ferron A, Ballet P, Hassis W, A new nBn IR detection concept using HgCdTe material. J. Elect. Mater. 44( 9), 3069 – 3075( 2015). https:// doi. org / 10.1007 / s11664-015-3821-6.
27 Thi L, Yen YK, Mori N, A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors, Jpn. J. Appl. Phys. 59( 4), 044005( 2020). https:// doi. org / 10.35848 / 1347-4065 / ab7e77.
28 Bauer JG, Trommer R, Long-term operation of planar InGaAs / InP pin photodiodes, IEEE Trans. Electron Devices 35( 12), 2349 – 2354( 2002). https:// doi. org / 10.1109 / 16.8813.
29 Zhang Q, et al., Tuning Ga 2 O 3-based avalanche photodetectors performance through barrier layer thickness optimization, Mater. Design 239, 112823( 2024). https:// doi. org / 10.1016 / j. matdes. 2024.112823.
30 Zhang Q, et al., Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering, Nat. Commun. 14( 1), 418( 2023). https:// doi. org / 10.1038 / s41467-023-36117-8.
31 Bucsa I, et al., Large area, low capacitance InGaAs PINs, in Physics and Simulation of Optoelectronic Devices XXIX, Vol. 11680( SPIE, 2021). https:// doi. org / 10.1117 / 12.2578824.
32 Moys BA The theory of double-layer antireflection coatings, Thin Solid Films 21( 1), 145 – 157( 1974). https:// doi. org / 10.1016 / 0040-6090( 74) 90097-2.
33 Oh G, et al., Broadband antireflective coatings for high efficiency InGaP / GaAs / InGaAsP / InGaAs multi-junction solar cells, Solar Energy Mater. Solar Cells 207, 110359( 2020). https:// doi. org / 10.1016 / j. solmat. 2019.110359.
34 Milostnaya I, et al., Superconducting single-photon detectors designed for operation at 1.55-lm telecommunication wavelength, J. Phys. Conf. Ser. 43( 1) IOP Publishing( 2006). https:// doi. org / 10.1088 / 1742-6596 / 43 / 1 / 326.
35 Sze SM, Li Y, Kwok KNg, Physics of Semiconductor Devices( John Wiley & Sons, 2021).
36 Klem JF, et al., Mesa-isolated InGaAs photodetectors with low dark current, Appl. Phys. Lett. 95( 3),( 2009) https:// doi. org / 10.1063 / 1.3184807.
37 Dolas MH, et al.. Low dark current diffusion limited planar type InGaAs photodetectors, in Infrared Sensors, Devices, and Applications IX, Vol. 11129( SPIE, 2019). https:// doi. org / 10.1117 / 12.2528666.
38 Chang S-H, et al., Ultra high performance planar InGaAs PIN photodiodes for high speed optical fiber communication, Sens. Actuat. A Phys. 133( 1), 9 – 12( 2007). https:// doi. org / 10.1016 / j. sna. 2006.04.023.
39 Martyniuk P, Rogalski A, HOT infrared photodetectors, Opto-Elect. Rev. 21( 2), 239 – 257( 2013). https:// doi. org / 10.2478 / s11772-013-0090-x.