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J. Eur. Opt. Society-Rapid Publ. 22, 39( 2026) grating a Si 3 N 4 / SiO 2 anti-reflection coating, surface reflectance was reduced to nearly zero at 1.55 lm, resulting in a responsivity enhancement of approximately 36 %( from 0.60 to 0.82 A / W). The device also exhibits low capacitance( 9.2 pF at �5 V) and a high breakdown voltage( �82.5 V), indicating its suitability for high-speed, lownoise, and wide dynamic range applications. Overall, this study demonstrates that precise control of barrier composition, doping, and layer thickness enables simultaneous optimization of electrical and optical performance in nBn architectures [ 39 ]. The presented design achieves an excellent trade-off between ultra-low dark current and high responsivity under low-bias operation, making it a strong candidate for next-generation short-wave infrared photodetectors operating under low-photon-flux and high-sensitivity conditions.
Funding This research received no external funding.
Conflicts of interest
Theauthorsdeclare thattherearenoconflicts of interest related to this article.
Data availability statement
The data is available from the corresponding author under reasonable request.
Author contribution statement
Ç. Tok was responsible for the conceptualization, design, simulation, formal analysis, investigation, methodology, resources, data curation, visualization, and writing of the original draft, as well as the review and editing of the manuscript.
M. Satılmısß focused on the visualization, resources, methodology, investigation, and critical review of the manuscript.
H. Kelesß handled the data curation, methodology, investigation, and re-editing of the manuscript.
F. Oğuz provided conceptualization, supervision, and contributed to the re-editing and design.
H. Sarı provided supervision and contributed to the conceptual framework.
E. Özbay oversaw the methodology, conceptual framework, and final manuscript approval.
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