JEOS RP ISSN03 | Page 168

J. Eur. Opt. Society-Rapid Publ. 22, 16( 2026) 161
Table 3. Comparison of key performance parameters of micro-ring resonators. Reference
Result type
MRR propagation loss [ dB / cm ]
Interface scattering loss [ dB / cm ]
Q-factor of fundamental frequency [ Hz ] g SHG
FSR [ GHz ]
Insertion Loss [ dB ]
Chip Area [ mm 2 ]
[ 13 ]
Experiment
0.5
0.8
2.0 10 5
11.5 %
110
4.2
8.0
[ 22 ]
Experiment
0.6
0.9
2.2 10 5
10.8 %
105
4.5
9.2
[ 25 ]
Simulation
0.2
0.3
2.8 10 5
12.5 %
110
2.8
4.8
[ 28 ]
Experiment
0.4
0.7
2.5 10 5
12.1 %
118
3.8
7.5
[ 29 ]
Simulation
0.3
0.5
1.2 10 5
13.2 %
98
3.5
10.0
[ 38 ]
Simulation
0.3
0.4
1.5 10 5
N / A
95
3.3
5.2
This work
Simulation
0.15
0.2
3.2 10 5
15.0 %
120
2.1
3.8
Note: To ensure the rationality of the comparison, this table distinguishes between simulation and experimental results
of reference devices. The core comparison focus is on the consistency of performance trends between this work
( simulation) and other simulation-based studies [ 25, 29, 38 ]. The experimental results [ 13, 22, 28 ] are only for reference
to reflect the performance gap between simulation and practical application, and do not constitute a direct quantitative
comparison basis.
Table 4. Performance comparison between the proposed work and relevant devices.
Reference
Result type
Platform
Bandwidth [ GHz ]
V p L [ V cm ]
Area [ mm 2 ]
Frequency doubling
[ 10 ]
Experiment
Si
67
3
N / A
N / A
[ 11 ]
Experiment
Si
110
6.8
N / A
N / A
[ 13 ]
Experiment
TFLN
> 70
2.2
10
Supported
[ 15 ]
Simulation
TFLN
60
1.8
2
Supported
[ 16 ]
Experiment
TFLN
67
1.8
15
N / A
[ 25 ]
Simulation
SiC-LN
> 65
3.5
4.8
Supported
[ 38 ]
Simulation
Si 3 N 4-LN
> 50
6.0
5.2
N / A
This work
Simulation
Si 3 N 4- TFLN
72
2.8
3.648
Supported
Note: This table clarifies the result type( simulation / experiment) of each reference device. The quantitative comparison
of this work( Si 3 N 4-TFLN, simulation) is limited to other simulation-based multifunctional integrated devices [ 15, 25,
38 ], focusing on verifying the advantages of the proposed scheme in bandwidth-voltage balance and miniaturization.
Experimental results are included for qualitative reference to reflect the state-of-the-art performance of similar devices.
loss cannot simultaneously support high bandwidth phase modulation and efficient frequency doubling.
2. Design a collaborative structure between a DD-MZM and a racetrack MRR, derive the matching conditions between the dynamic phase of modulated light and the resonant phase of MRR, and establish a correlation model between modulation bandwidth and frequency doubling efficiency. The simulation results show that this structure can achieve electro-optic modulation bandwidth above 72 GHz, MRR FSR of 120 GHz, and 15 % frequency doubling efficiency, while suppressing crosstalk between functional modules to below �35 dB, solving the problems of performance imbalance and excessive crosstalk in traditional separated or simple splicing structures.
3. By optimizing the DD-MZM modulation arm length( 5 mm), MRR geometric parameters( radius 80 lm, straight waveguide length 280 lm), and impedance matching characteristics of the T-shaped track electrode( characteristic impedance stable at 50 X), the overall chip area of the device is compressed to 3.648 mm 2, which is more than 60 % smaller than existing similar multifunctional integrated devices( area more than 10 mm 2). This provides key technical support and new ideas for the miniaturization design of high-density optoelectronic integrated systems, such as quantum communication multi-channel photonic chips and microwave photonic radar signal processing arrays.
6 Future prospects
The Si 3 N 4-TFLN heterogeneous integrated multifunctional device proposed in this study provides a new paradigm for the field of optoelectronic integration. In the future, its performance boundaries and application value can be further expanded from two aspects: technological optimization and scenario implementation.