JEOS RP ISSN03 | Página 167

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J. Eur. Opt. Society-Rapid Publ. 22, 16( 2026)

Table 3 compares the key parameters of this work( simulation) with representative research results of TFLN-based MRRs in recent years, with a clear distinction between simulation and experimental data. Among the simulationbased studies [ 25, 29, 38 ], this work achieves the lowest MRR propagation loss( 0.15 dB / cm) and interface scattering loss( 0.2 dB / cm), and the highest Q-factor( 3.2 10 5) and frequency doubling efficiency( 15.0 %), verifying the effectiveness of the Si 3 N 4-TFLN heterogeneous integration scheme.

4.4 Comprehensive performance analysis and comparison

Fig. 12. Curve of frequency doubling efficiency varying with fundamental light power.

of this interface is reduced by 62.5 % compared to traditional TFLN MRR [ 29 ], reducing energy dissipation in the resonant cavity and enhancing the ability to confine the optical field.

Among them, K is a constant, in this design K 15 %, determined by parameters such as d 33 and Q. Thismodel indicates that when f m 60 GHz, the g SHG remains above 12 %, meeting the requirements for efficient frequency doubling. Because f 3dB > 70 GHz, even if f m approaches 70 GHz, the g SHG attenuation is still less than 3 %, achieving high bandwidth high efficiency compatibility.

Figure 12 depicts the variation curve of frequency doubling efficiency with fundamental light power P w, andthe results not only verify the high frequency doubling efficiency of the device, but also reflectitsgoodpoweradaptability, which is of great significance for practical engineering applications. The frequency doubling efficiency increases linearly from 7.8 % to 29.7 % with the increase of fundamental light power( 50 – 200 mW) without obvious saturation, indicating that the Si 3 N 4-TFLN heterojunction has a stable nonlinear optical response and no significant optical field loss in the MRR cavity. At the practical moderate power of 100 mW, the device achieves a frequency doubling efficiency of 15 %, which is 30.4 % higher than that of the single TFLN material MRR( 11.5 %), and this result directly verifies the effectiveness of the“ Si 3 N 4-TFLN heterogeneous integration + high-Q MRR resonant enhancement” scheme proposed in this paper.

In recent years, numerous scholars and research teams have conducted extensive theoretical studies and experimental verifications on phase modulators and frequency doublers, achieving significant progress in this field. This paper conducts a comparative analysis between the proposed work and relevant studies as presented in Table 4.

Table 4 compares the performance of this work( simulation) with that of representative phase modulators and frequency doublers, with a clear distinction between simulation and experimental data. Among the simulationbased multifunctional integrated devices [ 15, 25, 38 ], this work achieves a balanced performance of 72 GHz bandwidth and a V p L of 2.8 V p cm, as well as the smallest chip area( 3.648 mm 2), which reflects the significant advantage of the Si 3 N 4-TFLN heterogeneous integration structure in miniaturization and performance coordination.

This reflects the significant advantage of the composite structure in terms of integration level, making it more suitable for high-density integrated optoelectronic systems.

5 Conclusion

A TFLN on-chip device based on DD-MZM and MRR structure, integrating phase modulation and frequency doubling functions is proposed in this paper. As an optimized combination design scheme based on two aspects of materials and structures, it integrates the advantages of heterogeneous integration platforms and the advantages of multifunctional realization. It provides an important reference for the development of high-precision optical modulation, high-efficiency frequency doubling, and high-density integrated optoelectronic systems, and is expected to play a key role in fields such as optical communication, microwave photonics, and quantum optics.

1. Propose a heterojunction integration scheme of Si 3 N 4- TFLN. By optimizing the heterojunction interface preparation process of the 0.05 lm thick Si 3 N 4-TFLN transition layer, the low transmission loss characteristics of the Si 3 N 4 material( reducing the propagation loss of the MRR to 0.2 dB / cm) and the strong electro-optic effect and second-order nonlinear characteristics of TFLN material are combined, effectively breaking through the limitations of single materials( such as pure Si electro-optic coefficient). The performance bottleneck of low and pure TFLN with high