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J. Eur. Opt. Society-Rapid Publ. 21, 6( 2025)
Figure 8. Resistance of the MSM structure based on( a) the pure V 2 O 5 / FTO film and( b) the TiO 2-doped V 2 O 5 / FTO film under 20 – 360 ° C;( c) Two devices’ scatter plots and Gauss nonlinear fitting curves of first order derivative of resistance with respect to temperature;( d) The ratio of the resistance changes and( e) the h( k)( 700 nm) of two devices under thermal cycles.
electric-modulation performance of the film has changed after TiO 2-doping. From the result, the FTO / V 2 O 5-TiO 2 / FTO device has better electrical modulation performance than the FTO / V 2 O 5 / FTO device.
4 Conclusion
The TiO 2-doped V 2 O 5 / FTO film was prepared by convenient and economical sol-gel method, and the photoelectric device with the MSM structure based on the prepared film was fabricated. The morphology, structure and composition of the film were studied, and the photoelectric properties of the device were further experimented. SEM results shows that the films have pores to improve conductivity, which corresponds to the O 1s spectrum formation in XPS. XRD and XPS results show that TiO 2 nano powder has been evenly dispersed into the film, and the film has shown a polycrystalline structure.
The TiO 2-doped V 2 O 5 / FTO film undergoes a thermal phase transition near 259.91 ° C, and the transmittance decreases substantially. The maximum modulation amplitude increases from 8.619 % to 18.282 %, increasing by 9.663 % after 12 % TiO 2-doping. The resistance of the FTO / V 2 O 5-TiO 2 / FTO device is 149.35 X at 20 ° C. Comparing with the undoped thin-film devices, the resistance reduces by 3 – 4 orders of magnitude. During the heating process at 20 – 360 ° C, the resistance decreases to 56.29 %. The maximum transmittance variations of the FTO / V 2 O 5-TiO 2 / FTO device in 400 – 1600 nm band with the