IGR Insulated Gate Bipolar Transistors and Metal Oxide | Page 3

Segments Covered
The report on global insulated gate bipolar transistors and metal oxide field effect transistor market covers
segments such as type, power rating and application. The type segment is bifurcated into discrete IGBT and
IGBT modules. The power rating segment includes high power, medium power, and low power IGBTs.
Based on application, the market is segment into energy & power, consumer electronics, inverter & UPS,
electrical vehicle, industrial system, and others.
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Geographic Coverage and Analysis:
The report provides regional analysis covering geographies such as North America, Europe, Asia-Pacific,
and Rest of the World. In this section the key trends and market size for each geography is provided over
the period of 2017 – 2023. The report covers the analysis of global as well as regional markets of IGBTs and
MOSFET semiconductors. Moreover, the report provides deep insights on demand forecasts, market trends
and micro and macro indicators. In addition, this report provides insights on the factors that driving and
restraining the demand globally as well as regionally. Moreover key investment market analysis given in
the report brings an insight on the investment areas that existing or new market players can consider.
Based on geography, the market is analyzed into North America (U.S., Mexico, and Canada), Europe (UK,
Germany, France, and rest of Europe), Asia-Pacific (China, India, Japan, South Korea, and rest of Asia-
Pacific), and LAMEA (Latin America, Middle East, and Africa).
Companies Profiled:
The report provides profiles of the companies in the global insulated gate bipolar transistors and metal
oxide field effect transistor market such as, Fairchild Semiconductor International Inc., STMicroelectronics