IGR Insulated Gate Bipolar Transistors and Metal Oxide | Page 2

The report on Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by type
(discrete, modules), power rating (high, medium, low power), application (energy, power, consumer
electronics, inverter, electrical vehicle, industrial system) trends analysis and forecasts up to 2023 studies
the market sizes, key trends and opportunities in the main geographies such as North America, Europe,
Asia-Pacific, Rest of the World. According to the report the Global Insulated Gate Bipolar Transistors and
Metal Oxide Field Effect Transistor Market is projected to grow at a CAGR of 12.3% in terms of value over
the period of 2017-2023. The growth in the world market is primarily driven by significant contribution by
North America (Leading region) region to this market.
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Market Insights:
IGBT aims to deliver faster switching rate and higher efficiency to enable proper operations at high voltage
or high current. In addition, it can be used for dynamic breaking, where the power is dissipated by resistors
that are connected in parallel or in series. It is widely used in high power rating applications, which include
electric vehicle motor drives, inductive heating cookers, and appliance motor drives.
IGBT is widely used in various applications such as renewable energy, high voltage direct current (HVDC),
motor drive, and consumer electronics, owing to its faster switching rate, high efficiency, and improved
durability. Moreover, it supports high input impedance and improved parallel current sharing; thereby,
fueling the market growth. However, performance issues, such as current leakage and breakdown, hamper
the market growth. Proactive government initiatives to establish HVDCs & smart grids and increase in
demand for consumer electronic are expected to provide lucrative opportunities to market players in the
near future.