SEE, on the other hand, affects at the circuit level. In memory cells, it may cause a bit to flip. In digital circuits, it may cause a pulse to propagate through the circuit. These however, are not permanently damaging. Strong bursts of energetic particles can cause severe effects like generating shorts in the circuit (called latch-ups) or damage the gate oxide.
But where will devices experience radiation?
It’s not as if we expose our phones to high energy radiations on a daily basis. The circuits that are actually exposed to such high doses are those meant for special purpose applications. Beyond the atmosphere, there’s always an incoming barrage of high energy particles of all sorts. So, all devices meant for space applications are at risk. Further, circuits used in high energy physics experiments such as particle accelerators also are under threat from radiation.
Is there any solution?
Yes. The process is called radiation hardening. Literally, it means making the devices ‘hard’ or resistant to radiation. One of the methods is to use Silicon-On-Insulator technology. But that brings with it, its own set of problems. Shielding is a good option. There are also various fabrication methods and layouts on the chip which are used and which give a better performance when attacked by radiation.
What if the device is damaged?
TID can be mitigated by annealing at a specific temperature. This causes the traps to escape as they gain energy from the high temperature. As for SEE, an entire reboot of the system might be helpful. But imagine the losses if an entire system on a space station needs to be rebooted!
So, the best we can do is use proper radiation hardening techniques and avoid radiation related side-effects. But of course, we can never be sure!
References: T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits; https://www.cogenda.com/article/TID; https://radhome.gsfc.nasa.gov/radhome/see.htm; Wikipedia