GaN Power Device Market Infrastructure Growth and
Development 2018 to 2026
GaN Power Device Market research provides industry analysis by
type, manufacturer, application along with key factors influencing
the growth of the market which include growth drivers, restraints,
opportunities and challenges, strategically profile key players and
comprehensively
analyze
their
market
share
and
core
competencies.
Gallium nitride (GaN) compound is a hard semiconductor material featuring a wide band gap
(energy gap) of 3.4 electronvolts (eV) with high heat capacity and thermal conductivity. GaN
finds significant applications in power devices used in electrical energy control systems and
conversions including telecommunication, industrial, automotive, and high RF antennas and
radar in aerospace and defense technologies are expected to provide opportunities for growth of
the GaN market over the forecast period.
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High energy efficiency loss in power devices is primarily attributed to conduction losses due to
high device resistance and switching transitions. GaN materials prevent such energy loss, as
they are featured with high breakdown voltage and low conduction resistance, in turn enabling
high-speed switching operations. GaN thus is used to ensure high efficiency of operations in
electrical systems. Moreover, low conduction resistance of GaN, allows the material compound to
sustain high energy application in compact sizes, enabling higher miniaturization of the circuits.
These significant benefits of GaN over other alternatives such as silicon transistors that feature
relatively larger chip area to enhance their conductivity, are expected to fuel the overall GaN
power device market.