Doping
Doping is a process by which impurities are introduced into pure silicon by injecting a different but similar element like phosphorus into the element to create more charges. Different enough to produce the irregularities to facilitate electron flow but similar enough to fit into the chemical structures created by the pure silicon.
P-type
Uses an element like boron with Less valence electrons to create a hole which in turn allows electrons into it and generate a flow.
N-TYPE
Uses an element like Phosphorus With more Valence Electrons, bringing in extra electrons which aren't as bound to the atom, letting it flow easier.
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ACTUALLY, because of how the PN Junction is made, the extra electrons on the n-type sides naturally diffuse into the p-side to fill the holes. Remember, boron isn't negatively charged, it just has one less electron than silicon, so these new electron make a barrier of negatively charged atoms between the n-type and p-type sections. This blocks the flow of electric charge until we apply a small positive force through the gate, allowing electrons to overcome the repulsion and flow through.