Market Research Global Next Generation Memory Market Analysis 2018

Next-generation memories include the latest developments in the memory industry such as ferroelectric
random-access memory (FeRAM), phase-change memory (PCM), resistive random-access memory
(ReRAM), and magnetic random-access memory (MRAM). The MRAM segment includes spin-transfer
torque random-access memory (STT-MRAM). Next-generation memories are usually nonvolatile in
nature.
MIR’s analysts forecast the global next generation memory market to grow at a CAGR of 66.63% during
the period 2017-2021.
Covered in this report
The report covers the present scenario and the growth prospects of the global next generation memory
market for 2017-2021. To calculate the market size, the report considers revenue generated from the
sales of nonvolatile memory (NVM) technologies implemented in the different application segments.
The market is divided into the following segments based on geography:
- Americas
- APAC
- EMEA
MIR's report, Global Next Generation Memory Market 2017-2021, has been prepared based on an in-
depth market analysis with inputs from industry experts. The report covers the market landscape and its
growth prospects over the coming years. The report also includes a discussion of the key vendors
operating in this market.
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https://www.marketinsightsreports.com/reports/04084877/global-next-generation-memory-market-
research-report-2017-to-2021/inquiry
Key vendors
- Cypress Semiconductor
- Fujitsu
- Intel
- IBM
- Micron Technology
- ROHM Semiconductor
- Samsung Electronics
- Texas Instruments
- Toshiba
Other prominent vendors
- Adesto Technologies
- Crossbar
- Everspin Technologies
Market driver
- Growing demand for FeRAM in automotive applications.
- For a full, detailed list, view our report
Market challenge