JEOS RP ISSN01 | Seite 74

J. Eur. Opt. Society-Rapid Publ. 21, 7( 2025) 69
Figure 11. Image of the random features in confocal mode( a) and STED mode( b).
Figure
12. Intensity profile of the random features for confocal mode( a) and STED mode( b). The dotted lines in the STED mode diagram show the approximate border of each feature.
Table 2. Parameters for imaging a random structure on the NV centres substrate.
Parameters
Values
Pixel size
10 nm
Pinhole size
1 A. U.
Dwell time
10 ls
Line accumulation
14
Excitation power
25 %
STED power
25 %
Excitation wavelength
561 nm
STED wavelength
775 nm
Frame size
4.5 2 lm 2
Table 3. Parameters for imaging the cross-shaped pattern on the NV centres substrate for two cases.
Parameters
Values for Case I
Values for Case II
Pixel size
20 nm
10 nm
Pinhole size
1 A. U.
1 A. U.
Dwell time
20 ls
20ls
Line accumulation
1
1
Excitation power
2 %
2 %
STED power
5 %
5 %
Excitation wavelength
561 nm
561 nm
STED wavelength
775 nm
775 nm
Frame size
15 15 lm 2
15 15 lm 2
switchable detection channel systems, which might be exploited for non-linear pump-probe SRM methods such as STED or ground state depletion GSD. Positive exceptions might be silicon-based nanostructures, when the plasma dispersion effect can be exploited [ 78 ] or other label-free SRM methods based on plasmonic scattering suppression like in the SAX and SUSI methods described in Section 3. An alternative with a potentially broader application potential might be provided by nonlinear photo-modulated reflectivity [ 79 ].
There exist many applications in nanotechnologies which should be suitable to implement thin inorganic extra layers on top of the substrate or ion dopants within a transparent substrate with alternatives to fluorescence markers, such as NV centres in artificial diamond, quantum dots or Nd-ions, which can be exploited relatively straight forward for RESOLFT-like SRM.
In applications where such extra-layers or dopants are not acceptable and where no other alternatives such as