p-n Junction
An arrangement consisting a p -type semiconductor brought into a close contact with n-type semiconductor , is called a p -n junction .
The current in a p-n junction is given by k B = I o ( e eV / k BT – 1 )
where I o is reverse saturation current , V is potential difference across the diode ,
and k B is the Boltzmann constant .
Terms Related to p-n Junction
( i ) Depletion Layer At p-n . junction a region is created , where there is no charge carriers . This region is called depletion layer . The width of this
region is of the order of 10 6 m .
( ii ) Potential Barrier The potential difference across the depletion layer is called potential barrier .
Barrier potential for Ge is 0.3 V and for Si is 0.7 V .
( iii ) Forward Biasing In this biasing , the p -side is connected to positive terminal and n-side to negative terminal of a battery .