optimize its power consumption and enhance program/erase (P/E) endurance. It is featured
with operations at junction temperatures of 175°C with read/write endurance of over 100
million cycles. Moreover, as per Renesas results, 0.07mJ per 8 byte rewrite energy consumption
was achieved on utilization of adaptable slope pulse control to weaken the electric fields and
degrade memory cells. These features are anticipated to drive the global 1T-MONOS market
over the coming years. Renesas Electronics Corporation introduced its 90 nm one-transistor
MONOS in February 2016, is expected to lead the industry applications over the forecast period
in the industry. Some of its key features include:
Memory architecture development with FN tunneling for high reliability and P/E
operations
Low powered weakening electric fields during P/E operations through adaptable slope
pulse control (ASPC) technology
Current consumption recorded at 98 µA i.e. 1 millionth of an ampere for rewriting
memories
Architecture is anticipated to find significant addressable applications in environmental
friendly automotive systems
Also, the company has introduced prototypes of128 KB flash memory incorporated with 90nm
1T-MONOS flash memory featuring these properties which is expected to start its mass
production in 2019.
Browse Complete Report @ https://www.coherentmarketinsights.com/ongoing-insight/1t-monos-market-601
1T-MONOS Market Taxonomy
On the basis of potential applications, the global 1T-MONOS market is classified into:
Automotive
Manufacturing and processing industries
Other
Increasing IoT applications and autonomous automotive will drive the industry growth
through the forecast period