Conductivity Profiling of InP Nanowires
IR nanoimaging measures the local conductivity without the need for electrical contacts . Thus , local conductivity changes at interfaces or defects can be mapped in real-space at 10 nm spatial resolution .
Carrier density
[ 10 18 cm -3 ]
8.2
8.0
7.8
Carrier concentration
neaSCOPE facilitates development of the next generation semiconducting materials .
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1 µ m
IR nanoscopy of a single modulation-doped InP nanowire highlights three differently doped , ca . 1-μm-long , segments along the nanowire growth direction . Measured reflectance and absorbance maps yield the local free-carrier concentration , revealing a ca . 10 % variation along the center segment that directly relates to the specific growth conditions , thus allowing for the optimization of growth procedures .
Optical phase n-type
J . Stiegler et al ., Nano Lett . 2010 , 10 , 1387 .
Au catalyst undoped
J . Stiegler et al ., Nature Commun . 2012 , 3 , 1131 .
J . Vaishnavi et al ., ACSnano 2021 , 15 , 12 , 20466 www . attocube . com