AFM height |
Carrier Density Quantification |
n≈10 20 cm 3 ≈10 19
≈10 18
THz amplitude calculation for doped Si
|
≤10 17 |
1 µ m |
Reflectance image at 1 THz acquired by neaSCOPE on the IMEC calibration sample exhibits contrast that depends on the free carrier density . Comparison of this contrast with the calculated reflectance at the imaging wavelength ( red dashed line in the bottom plot ) for p-doped Si of different doping levels allows for calibration-free extraction of the carrier concentration with nanoscale spatial resolution . |
Normalized amplitude |
10 16 |
10 17 10 18 |
10 19 |
n = 10 20 cm -3 |