Defect Analysis in Device Contacts
IR-neaSCOPE nanoimaging with sub-10 nm resolution directly probes charge carriers and provides high level of insight into device composition , doping concentration and carrier diffusion . This makes neaSCOPE an excellent tool for interface and strain analysis , device engineering and optimization .
Optical amplitude Optical phase SEM
W
SiO 2
1 ยต m Si
IR nanoscopy of MOS transistor
Si 3
N 4
IR imaging of a MOS transistor cross section reveals local doping and material variations not detected in SEM images . An ultra-thin Si 3
N 4 liner of only 10 nm width is clearly visble .
In collaboration with Infineon . neaSCOPE is a perfect tool for nanoscale quality control & failure analysis of semiconductor devices .
A . J . Huber et al ., Advanced Mater . 2007 , 19 , 2209 .
A . J . Huber et al ., Nanotech . 2010 , 21 , 235702 . www . attocube . com