Clean Energy Capability Portfolio | Empowering Consumers |
Artificial Electronic Materials – A Novel
“ Beyond CMOS ”
Technolog
The fabrication of artificial electronic materials by combining conventional semiconductors with nanofabrication techniques paves the way to reducing power consumption in semiconductor electronic devices . |
Competitive Advantage • Electron beam lithography of lateral twodimensional lattices on nanometer scale
• Complete cycle ( design – fabrication – electrical characterisation ) for proof of principle devices
• Developed process for p- and n-type devices
• Electrical low-temperature characterisation of semiconductor devices
Impact • Artificial electronic materials offer an alternative path to tackling increasing energy consumption by the IT industry
Successful Applications • Development of fabrication techniques for patterning of artificial lattices
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Capabilities and Facilities • Full suite of electronic equipment for low noise , low-temperature electrical measurements down to 30mK and magnetic fields up to 12T
• Piezoelectric sample rotation at mK temperatures
• 300mK / 7T cryostat for quick sample turn-around
• Variable temperature insert for device characterization between 1.5 and 300mK
• Access to ANFF-UNSW and ANU facilities for device fabrication
More Information Dr Oleh Klochan
School of Science
T : + 61 2 5114 5021
E : o . klochan @ unsw . edu . au
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• Evidence of artificially formed band structure in conventional semiconductors |
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• Voltage-controllable artificial band structure : from linearly dispersing to flat bands |
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